N-Channel MOSFET, 24.2 A, 250 V, 8-Pin PowerPAK SO-8 Vishay SIR692DP-T1-RE3

Номер на артикул на RS: 134-9163Марка: Vishay№ по каталога на производителя: SIR692DP-T1-RE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

24.2 A

Maximum Drain Source Voltage

250 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

67 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

25.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.25mm

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Детайли за продукта

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,022

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 24.2 A, 250 V, 8-Pin PowerPAK SO-8 Vishay SIR692DP-T1-RE3

€ 1,022

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 24.2 A, 250 V, 8-Pin PowerPAK SO-8 Vishay SIR692DP-T1-RE3
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

24.2 A

Maximum Drain Source Voltage

250 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

67 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

25.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.25mm

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Детайли за продукта

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more