Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Детайли за продукта
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,222
Each (In a Pack of 2) (ex VAT)
2
€ 2,222
Each (In a Pack of 2) (ex VAT)
2
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
2 - 18 | € 2,222 | € 4,44 |
20 - 98 | € 2,088 | € 4,18 |
100 - 198 | € 1,889 | € 3,78 |
200 - 498 | € 1,778 | € 3,56 |
500+ | € 1,667 | € 3,33 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Детайли за продукта