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N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3

Номер на артикул на RS: 200-6856Марка: Vishay№ по каталога на производителя: SiR680ADP-T1-RE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

125 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Pin Count

8

Maximum Drain Source Resistance

0.0035 Ω, 0.00288 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3

P.O.A.

N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

125 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Pin Count

8

Maximum Drain Source Resistance

0.0035 Ω, 0.00288 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more