Vishay N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 SIR462DP-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.89mm
Length
4.9mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.04mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1 287,98
€ 0,429 Each (On a Reel of 3000) (ex VAT)
3000
€ 1 287,98
€ 0,429 Each (On a Reel of 3000) (ex VAT)
Информацията за складовите наличности временно не е налична.
3000
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.89mm
Length
4.9mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.04mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products