Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO-8 SIR418DP-T1-GE3

Номер на артикул на RS: 814-1275PМарка: Vishay№ по каталога на производителя: SIR418DP-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

50 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.12mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 95,81

€ 0,958 Each (Supplied on a Reel) (ex VAT)

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO-8 SIR418DP-T1-GE3
Изберете тип опаковка

€ 95,81

€ 0,958 Each (Supplied on a Reel) (ex VAT)

Vishay N-Channel MOSFET, 23 A, 40 V, 8-Pin PowerPAK SO-8 SIR418DP-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
100 - 240€ 0,958€ 9,58
250 - 490€ 0,865€ 8,65
500 - 990€ 0,832€ 8,32
1000+€ 0,813€ 8,13

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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

50 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.12mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more