Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3

Номер на артикул на RS: 814-1272Марка: Vishay№ по каталога на производителя: SIR416DP-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Transistor Material

Si

Height

1.12mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 10,62

€ 1,062 Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3
Изберете тип опаковка

€ 10,62

€ 1,062 Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 90€ 1,062€ 10,62
100 - 240€ 1,00€ 10,00
250 - 490€ 0,903€ 9,03
500 - 990€ 0,849€ 8,50
1000+€ 0,797€ 7,97

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Transistor Material

Si

Height

1.12mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more