Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.2 A, 5 A
Maximum Drain Source Voltage
850 V
Series
E
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.95 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
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€ 27,19
€ 1,088 Each (In a Pack of 25) (ex VAT)
25
€ 27,19
€ 1,088 Each (In a Pack of 25) (ex VAT)
Информацията за складовите наличности временно не е налична.
25
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 25 - 25 | € 1,088 | € 27,19 |
| 50 - 100 | € 0,827 | € 20,68 |
| 125 - 225 | € 0,761 | € 19,04 |
| 250 - 600 | € 0,598 | € 14,94 |
| 625+ | € 0,574 | € 14,35 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.2 A, 5 A
Maximum Drain Source Voltage
850 V
Series
E
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.95 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products