Vishay E Series N-Channel MOSFET, 5 A, 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3

Номер на артикул на RS: 228-2880Марка: Vishay№ по каталога на производителя: SiHP6N80AE-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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€ 51,95

€ 1,039 Each (In a Tube of 50) (ex VAT)

Vishay E Series N-Channel MOSFET, 5 A, 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3

50

Предлагат се на бройка по 50
50€ 51,95
100€ 88,38
150€ 132,56
200€ 176,75
250€ 194,96
300€ 233,95
350€ 272,95
400€ 311,94
450€ 350,93
500€ 389,92
550€ 428,92
600€ 467,91
650€ 506,90
700€ 545,89
750€ 584,89

€ 51,95

€ 1,039 Each (In a Tube of 50) (ex VAT)

Vishay E Series N-Channel MOSFET, 5 A, 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3

Информацията за складовите наличности временно не е налична.

50

Предлагат се на бройка по 50
50€ 51,95
100€ 88,38
150€ 132,56
200€ 176,75
250€ 194,96
300€ 233,95
350€ 272,95
400€ 311,94
450€ 350,93
500€ 389,92
550€ 428,92
600€ 467,91
650€ 506,90
700€ 545,89
750€ 584,89

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Тръба
50 - 50€ 1,039€ 51,95
100 - 200€ 0,884€ 44,19
250+€ 0,78€ 38,99

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more