N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC Vishay SiHG70N60EF-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
253 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 11,78
Всеки (ex VAT)
Стандарт
1
€ 11,78
Всеки (ex VAT)
Стандарт
1
Купете в насипно състояние
| количество | Единична цена |
|---|---|
| 1 - 9 | € 11,78 |
| 10 - 24 | € 11,19 |
| 25 - 49 | € 10,59 |
| 50 - 99 | € 9,43 |
| 100+ | € 8,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
520 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.31mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
253 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products