Vishay P-Channel MOSFET, 2 A, 200 V, 3-Pin D2PAK SIHF9620S-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 8,76
€ 0,876 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 8,76
€ 0,876 Each (In a Pack of 10) (ex VAT)
Стандарт
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 0,876 | € 8,76 |
| 100 - 240 | € 0,659 | € 6,59 |
| 250 - 490 | € 0,544 | € 5,44 |
| 500 - 990 | € 0,482 | € 4,82 |
| 1000+ | € 0,459 | € 4,59 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
4.83mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products