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N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3

Номер на артикул на RS: 210-4978Марка: Vishay№ по каталога на производителя: SIHD11N80AE-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

€ 2 680,24

€ 0,893 Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3

€ 2 680,24

€ 0,893 Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK Vishay SIHD11N80AE-GE3
Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more