P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3

Номер на артикул на RS: 710-3386Марка: Vishay№ по каталога на производителя: SI7309DN-T1-E3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.05mm

Width

3.05mm

Minimum Operating Temperature

-65 °C

Height

1.04mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,962

Each (In a Pack of 5) (ex VAT)

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Изберете тип опаковка

€ 0,962

Each (In a Pack of 5) (ex VAT)

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 0,962€ 4,81
50 - 245€ 0,672€ 3,36
250 - 495€ 0,595€ 2,98
500 - 1245€ 0,502€ 2,51
1250+€ 0,453€ 2,26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.05mm

Width

3.05mm

Minimum Operating Temperature

-65 °C

Height

1.04mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more