Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.08mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Height
0.85mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
20
P.O.A.
20
Ideate. Create. Collaborate
JOIN FOR FREE
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Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
10.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
3.08mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
2
Height
0.85mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products