Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Номер на артикул на RS: 818-1352Марка: Vishay№ по каталога на производителя: SI5935CDC-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

20 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

7 nC @ 5 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

Страна на произход

China

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Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,499

Each (In a Pack of 20) (ex VAT)

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3
Изберете тип опаковка

€ 0,499

Each (In a Pack of 20) (ex VAT)

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,499€ 9,99
200 - 480€ 0,469€ 9,38
500 - 980€ 0,425€ 8,49
1000 - 1980€ 0,399€ 7,98
2000+€ 0,374€ 7,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

20 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

7 nC @ 5 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1.1mm

Страна на произход

China

Детайли за продукта

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more