Dual N-Channel MOSFET, 3.7 A, 30 V, 8-Pin 1206 ChipFET Vishay SI5902BDC-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
30 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.12 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Width
1.7mm
Number of Elements per Chip
2
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
10
P.O.A.
10
Ideate. Create. Collaborate
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Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
30 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.12 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Width
1.7mm
Number of Elements per Chip
2
Height
1.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products