Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.05 O,0.156 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Number of Elements per Chip
2
Series
TrenchFET
Страна на произход
China
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,388
Each (On a Reel of 3000) (ex VAT)
3000
€ 0,388
Each (On a Reel of 3000) (ex VAT)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.05 O,0.156 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Number of Elements per Chip
2
Series
TrenchFET
Страна на произход
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products