Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 53,97
€ 1,079 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 53,97
€ 1,079 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
50 - 245 | € 1,079 | € 5,40 |
250 - 495 | € 0,878 | € 4,39 |
500 - 1245 | € 0,73 | € 3,65 |
1250+ | € 0,666 | € 3,33 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Детайли за продукта