Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3

Номер на артикул на RS: 787-9008Марка: Vishay№ по каталога на производителя: SI4948BEY-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Детайли за продукта

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,308

Each (In a Pack of 5) (ex VAT)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Изберете тип опаковка

€ 1,308

Each (In a Pack of 5) (ex VAT)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,308€ 6,54
50 - 245€ 1,125€ 5,62
250 - 495€ 0,915€ 4,57
500 - 1245€ 0,76€ 3,80
1250+€ 0,695€ 3,47

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Детайли за продукта

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more