N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay SI4840BDY-T1-GE3

Номер на артикул на RS: 710-4736Марка: Vishay№ по каталога на производителя: SI4840BDY-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18.5 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.55mm

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

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€ 1,787

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay SI4840BDY-T1-GE3
Изберете тип опаковка

€ 1,787

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay SI4840BDY-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,787€ 8,94
50 - 120€ 1,679€ 8,40
125 - 245€ 1,518€ 7,59
250 - 495€ 1,429€ 7,15
500+€ 1,34€ 6,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18.5 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.55mm

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more