Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3

Номер на артикул на RS: 812-3205PМарка: Vishay№ по каталога на производителя: SI4178DY-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC Vishay SI4800BDY-T1-E3
P.O.A.Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.

€ 64,99

€ 0,325 Each (Supplied on a Reel) (ex VAT)

Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3
Изберете тип опаковка

€ 64,99

€ 0,325 Each (Supplied on a Reel) (ex VAT)

Vishay N-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC SI4178DY-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
200 - 480€ 0,325€ 6,50
500 - 980€ 0,305€ 6,10
1000 - 1980€ 0,264€ 5,28
2000+€ 0,22€ 4,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC Vishay SI4800BDY-T1-E3
P.O.A.Each (Supplied on a Reel) (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC Vishay SI4800BDY-T1-E3
P.O.A.Each (Supplied on a Reel) (ex VAT)