Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,688
Each (In a Pack of 10) (ex VAT)
10
€ 0,688
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 90 | € 0,688 | € 6,88 |
100 - 240 | € 0,646 | € 6,46 |
250 - 490 | € 0,585 | € 5,85 |
500 - 990 | € 0,551 | € 5,51 |
1000+ | € 0,516 | € 5,16 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.5mm
Страна на произход
China
Детайли за продукта