P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3

Номер на артикул на RS: 812-3154Марка: Vishay№ по каталога на производителя: SI3447CDV-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

68 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

20 nC @ 8 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3
Изберете тип опаковка

P.O.A.

Each (Supplied as a Tape) (ex VAT)

P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

68 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

20 nC @ 8 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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