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Vishay P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP-6 SI3433CDV-T1-GE3

Номер на артикул на RS: 812-3142Марка: Vishay№ по каталога на производителя: SI3433CDV-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

30 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 5,49

€ 0,275 Each (In a Pack of 20) (ex VAT)

Vishay P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP-6 SI3433CDV-T1-GE3
Изберете тип опаковка

€ 5,49

€ 0,275 Each (In a Pack of 20) (ex VAT)

Vishay P-Channel MOSFET, 6 A, 20 V, 6-Pin TSOP-6 SI3433CDV-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

30 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Height

1mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more