P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3

Номер на артикул на RS: 812-3145Марка: Vishay№ по каталога на производителя: SI2377EDS-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

14 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,372

Each (In a Pack of 20) (ex VAT)

P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
Изберете тип опаковка

€ 0,372

Each (In a Pack of 20) (ex VAT)

P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,372€ 7,44
200 - 480€ 0,283€ 5,66
500 - 980€ 0,261€ 5,22
1000 - 1980€ 0,223€ 4,47
2000+€ 0,193€ 3,86

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

14 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more