Vishay N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Si2338DS-T1-GE3

Номер на артикул на RS: 812-3126Марка: Vishay№ по каталога на производителя: Si2338DS-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.04mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 8,34

€ 0,417 Each (In a Pack of 20) (ex VAT)

Vishay N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Si2338DS-T1-GE3
Изберете тип опаковка

€ 8,34

€ 0,417 Each (In a Pack of 20) (ex VAT)

Vishay N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Si2338DS-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,417€ 8,34
200 - 480€ 0,322€ 6,43
500 - 980€ 0,30€ 6,00
1000 - 1980€ 0,27€ 5,41
2000+€ 0,251€ 5,02

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.04mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more