Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.09 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 9,04
€ 0,452 Each (In a Pack of 20) (ex VAT)
Стандарт
20
€ 9,04
€ 0,452 Each (In a Pack of 20) (ex VAT)
Стандарт
20
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
20 - 180 | € 0,452 | € 9,04 |
200 - 480 | € 0,34 | € 6,80 |
500 - 980 | € 0,316 | € 6,31 |
1000 - 1980 | € 0,272 | € 5,43 |
2000+ | € 0,225 | € 4,51 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.09 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Width
1.4mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Страна на произход
China
Детайли за продукта