Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3

Номер на артикул на RS: 710-3257Марка: Vishay№ по каталога на производителя: SI2308BDS-T1-GE3
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.09 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Информацията за складовите наличности временно не е налична.

€ 9,04

€ 0,452 Each (In a Pack of 20) (ex VAT)

Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3
Изберете тип опаковка

€ 9,04

€ 0,452 Each (In a Pack of 20) (ex VAT)

Vishay N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 SI2308BDS-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
20 - 180€ 0,452€ 9,04
200 - 480€ 0,34€ 6,80
500 - 980€ 0,316€ 6,31
1000 - 1980€ 0,272€ 5,43
2000+€ 0,225€ 4,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.09 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Width

1.4mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more