P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3

Номер на артикул на RS: 710-3238PМарка: Vishay№ по каталога на производителя: SI2301CDS-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

112 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

860 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Typical Gate Charge @ Vgs

3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,371

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3
Изберете тип опаковка

€ 0,371

Each (Supplied on a Reel) (ex VAT)

P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
20 - 180€ 0,371€ 7,42
200 - 480€ 0,297€ 5,93
500 - 980€ 0,223€ 4,46
1000 - 1980€ 0,186€ 3,71
2000+€ 0,167€ 3,34

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

112 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

860 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Typical Gate Charge @ Vgs

3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more