N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3

Номер на артикул на RS: 655-6795PМарка: Vishay№ по каталога на производителя: SI1302DL-T1-E3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

0.86 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Transistor Material

Si

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,372

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
Изберете тип опаковка

€ 0,372

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Ролка
10 - 90€ 0,372€ 3,72
100 - 490€ 0,28€ 2,80
500 - 990€ 0,261€ 2,61
1000 - 2490€ 0,205€ 2,05
2500+€ 0,175€ 1,75

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

0.86 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Transistor Material

Si

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Детайли за продукта

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more