Vishay P-Channel MOSFET, 760 mA, 30 V, 6-Pin SC-89-6 SI1077X-T1-GE3

Номер на артикул на RS: 812-3050PМарка: Vishay№ по каталога на производителя: SI1077X-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

244 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Width

1.2mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.43 nC @ 4.5 V

Length

1.7mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 51,84

€ 0,259 Each (Supplied on a Reel) (ex VAT)

Vishay P-Channel MOSFET, 760 mA, 30 V, 6-Pin SC-89-6 SI1077X-T1-GE3
Изберете тип опаковка

€ 51,84

€ 0,259 Each (Supplied on a Reel) (ex VAT)

Vishay P-Channel MOSFET, 760 mA, 30 V, 6-Pin SC-89-6 SI1077X-T1-GE3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Ролка
200 - 980€ 0,259€ 5,18
1000 - 1980€ 0,235€ 4,70
2000 - 4980€ 0,222€ 4,43
5000+€ 0,208€ 4,16

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

244 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Width

1.2mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.43 nC @ 4.5 V

Length

1.7mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more