Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Детайли за продукта
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 51,84
€ 0,259 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
200
€ 51,84
€ 0,259 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
200
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 200 - 980 | € 0,259 | € 5,18 |
| 1000 - 1980 | € 0,235 | € 4,70 |
| 2000 - 4980 | € 0,222 | € 4,43 |
| 5000+ | € 0,208 | € 4,16 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Детайли за продукта


