Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 8,64
€ 0,864 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 8,64
€ 0,864 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 0,864 | € 8,64 |
| 100 - 240 | € 0,821 | € 8,21 |
| 250 - 490 | € 0,691 | € 6,91 |
| 500 - 990 | € 0,649 | € 6,49 |
| 1000+ | € 0,603 | € 6,04 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.7 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Height
2.38mm
Minimum Operating Temperature
-55 °C
Страна на произход
Malaysia
Детайли за продукта


