N-Channel MOSFET, 1.5 A, 100 V, 3+Tab-Pin SOT-223 Vishay IRLL110PBF

Номер на артикул на RS: 541-2509PМарка: Vishay№ по каталога на производителя: IRLL110PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3+Tab

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.45mm

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Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRLL110TRPBF
€ 0,582Each (Supplied on a Reel) (ex VAT)

Запитване за цена

N-Channel MOSFET, 1.5 A, 100 V, 3+Tab-Pin SOT-223 Vishay IRLL110PBF
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Запитване за цена

N-Channel MOSFET, 1.5 A, 100 V, 3+Tab-Pin SOT-223 Vishay IRLL110PBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRLL110TRPBF
€ 0,582Each (Supplied on a Reel) (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3+Tab

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.45mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRLL110TRPBF
€ 0,582Each (Supplied on a Reel) (ex VAT)