Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Запитване за цена
Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
5
Запитване за цена
Each (Supplied in a Tube) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Тръба)
5
Информацията за складовите наличности временно не е налична.
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


