Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Номер на артикул на RS: 708-4831Марка: Vishay№ по каталога на производителя: IRFU110PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

6.22mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 6,47

€ 0,647 Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF
Изберете тип опаковка

€ 6,47

€ 0,647 Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
10 - 90€ 0,647€ 6,47
100 - 240€ 0,583€ 5,83
250 - 490€ 0,536€ 5,36
500 - 990€ 0,505€ 5,05
1000+€ 0,421€ 4,20

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

6.22mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more