Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 6,47
€ 0,647 Each (In a Pack of 10) (ex VAT)
Стандарт
10
€ 6,47
€ 0,647 Each (In a Pack of 10) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
10
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 10 - 90 | € 0,647 | € 6,47 |
| 100 - 240 | € 0,583 | € 5,83 |
| 250 - 490 | € 0,536 | € 5,36 |
| 500 - 990 | € 0,505 | € 5,05 |
| 1000+ | € 0,421 | € 4,20 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


