N-Channel MOSFET, 3.8 A, 250 V, 3-Pin DPAK Vishay IRFR224TRPBF

Номер на артикул на RS: 812-0622PМарка: Vishay№ по каталога на производителя: IRFR224TRPBF
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Запитване за цена

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 3.8 A, 250 V, 3-Pin DPAK Vishay IRFR224TRPBF
Изберете тип опаковка

Запитване за цена

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 3.8 A, 250 V, 3-Pin DPAK Vishay IRFR224TRPBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more