Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.8 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 51,03
€ 0,51 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 51,03
€ 0,51 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 100 - 240 | € 0,51 | € 5,10 |
| 250 - 490 | € 0,461 | € 4,61 |
| 500 - 990 | € 0,434 | € 4,34 |
| 1000+ | € 0,408 | € 4,08 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.8 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


