N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014PBF

Номер на артикул на RS: 543-1667Марка: Vishay№ по каталога на производителя: IRFR014PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.7 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Детайли за продукта

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,558

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014PBF
Изберете тип опаковка

€ 1,558

Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,558€ 7,79
50 - 120€ 1,481€ 7,40
125 - 245€ 1,092€ 5,46
250 - 495€ 1,013€ 5,06
500+€ 0,903€ 4,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.7 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Детайли за продукта

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more