Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

Номер на артикул на RS: 541-1095Марка: Vishay№ по каталога на производителя: IRFPG50PBFDistrelec Article No.: 30191596
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

190 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.7mm

Детайли за продукта

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 4,01

€ 4,01 Всеки (ex VAT)

Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF
Изберете тип опаковка

€ 4,01

€ 4,01 Всеки (ex VAT)

Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 9€ 4,01
10 - 24€ 3,45
25 - 49€ 3,22
50 - 99€ 3,01
100+€ 2,60

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120
Запитване за ценаВсеки (ex VAT)
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Запитване за ценаВсеки (ex VAT)
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Запитване за ценаВсеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

190 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.7mm

Детайли за продукта

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120
Запитване за ценаВсеки (ex VAT)
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Запитване за ценаВсеки (ex VAT)
N-Channel MOSFET Transistor, 8 A, 1000 V, 3-Pin TO-3PN Toshiba 2SK1120(F)
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