Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF

Номер на артикул на RS: 541-1089Марка: Vishay№ по каталога на производителя: IRFPE50PBFDistrelec Article No.: 17117013
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

200 nC @ 10 V

Width

5.31mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFPE50 7.8A 600V
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€ 2,77

€ 2,77 Всеки (ex VAT)

Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF
Изберете тип опаковка

€ 2,77

€ 2,77 Всеки (ex VAT)

Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 9€ 2,77
10 - 24€ 2,39
25 - 49€ 2,22
50 - 99€ 2,08
100+€ 1,80

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFPE50 7.8A 600V
Запитване за ценаВсеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Typical Gate Charge @ Vgs

200 nC @ 10 V

Width

5.31mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFPE50 7.8A 600V
Запитване за ценаВсеки (ex VAT)