N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF

Номер на артикул на RS: 787-9140PМарка: Vishay№ по каталога на производителя: IRFP460BPBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Series

D Series

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Number of Elements per Chip

1

Width

5.31mm

Minimum Operating Temperature

-55 °C

Height

20.82mm

Детайли за продукта

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 3,33

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF
Изберете тип опаковка

€ 3,33

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Купете в насипно състояние

количествоЕдинична цена
1 - 9€ 3,33
10 - 49€ 3,23
50 - 99€ 3,13
100 - 249€ 3,00
250+€ 2,86

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Series

D Series

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Number of Elements per Chip

1

Width

5.31mm

Minimum Operating Temperature

-55 °C

Height

20.82mm

Детайли за продукта

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more