Vishay N-Channel MOSFET, 23 A, 250 V, 3-Pin TO-247AC IRFP254PBF

Номер на артикул на RS: 541-0676PМарка: Vishay№ по каталога на производителя: IRFP254PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

250 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

140 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 27,84

€ 2,78 Each (Supplied in a Bag) (ex VAT)

Vishay N-Channel MOSFET, 23 A, 250 V, 3-Pin TO-247AC IRFP254PBF
Изберете тип опаковка

€ 27,84

€ 2,78 Each (Supplied in a Bag) (ex VAT)

Vishay N-Channel MOSFET, 23 A, 250 V, 3-Pin TO-247AC IRFP254PBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
10 - 49€ 2,78
50 - 99€ 2,61
100 - 249€ 2,42
250+€ 2,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

250 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

140 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Height

20.7mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more