N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247AC Vishay IRFP17N50LPBF

Номер на артикул на RS: 815-2755PМарка: Vishay№ по каталога на производителя: IRFP17N50LPBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

220 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

15.87mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Запитване за цена

Each (Supplied in a Tube) (ex VAT)

N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247AC Vishay IRFP17N50LPBF
Изберете тип опаковка

Запитване за цена

Each (Supplied in a Tube) (ex VAT)

N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247AC Vishay IRFP17N50LPBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

220 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

15.87mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

20.82mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more