Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
960 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 39,89
€ 0,399 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 39,89
€ 0,399 Each (Supplied on a Reel) (ex VAT)
Информацията за складовите наличности временно не е налична.
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
| количество | Единична цена | Per Ролка |
|---|---|---|
| 100 - 240 | € 0,399 | € 3,99 |
| 250 - 490 | € 0,35 | € 3,50 |
| 500 - 990 | € 0,324 | € 3,24 |
| 1000+ | € 0,27 | € 2,70 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
960 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.7mm
Number of Elements per Chip
1
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Детайли за продукта


