Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,361
Each (In a Tube of 50) (ex VAT)
50
€ 1,361
Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
50 - 50 | € 1,361 | € 68,06 |
100 - 200 | € 1,171 | € 58,55 |
250+ | € 1,089 | € 54,46 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта