Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF

Номер на артикул на RS: 542-9664Марка: Vishay№ по каталога на производителя: IRFI640GPBFDistrelec Article No.: 30191576
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFI640G 9.5A 200V
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€ 2,27

€ 2,27 Всеки (ex VAT)

Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF
Изберете тип опаковка

€ 2,27

€ 2,27 Всеки (ex VAT)

Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 9€ 2,27
10 - 49€ 1,93
50 - 99€ 1,82
100 - 249€ 1,69
250+€ 1,59

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFI640G 9.5A 200V
Запитване за ценаВсеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFI640G 9.5A 200V
Запитване за ценаВсеки (ex VAT)