Vishay N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP IRFI620GPBF

Номер на артикул на RS: 813-0708Марка: Vishay№ по каталога на производителя: IRFI620GPBFDistrelec Article No.: 30191574
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-220 FullPak (ISO)
Запитване за ценаВсеки (ex VAT)

€ 8,90

€ 1,78 Each (In a Pack of 5) (ex VAT)

Vishay N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP IRFI620GPBF
Изберете тип опаковка

€ 8,90

€ 1,78 Each (In a Pack of 5) (ex VAT)

Vishay N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP IRFI620GPBF

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,78€ 8,90
50 - 120€ 1,509€ 7,55
125 - 245€ 1,423€ 7,11
250 - 495€ 1,332€ 6,66
500+€ 1,155€ 5,77

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-220 FullPak (ISO)
Запитване за ценаВсеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-220 FullPak (ISO)
Запитване за ценаВсеки (ex VAT)