Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,613
Each (In a Tube of 50) (ex VAT)
50
€ 1,613
Each (In a Tube of 50) (ex VAT)
50
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
50 - 50 | € 1,613 | € 80,67 |
100 - 200 | € 1,533 | € 76,65 |
250+ | € 1,452 | € 72,62 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Transistor Material
Si
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта