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Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9020PBF

Номер на артикул на RS: 145-1912Марка: Vishay№ по каталога на производителя: IRFD9020PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

6.3V

Height

3.37mm

Страна на произход

Philippines

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 90,58

€ 0,906 Each (In a Tube of 100) (ex VAT)

Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9020PBF

€ 90,58

€ 0,906 Each (In a Tube of 100) (ex VAT)

Vishay P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP IRFD9020PBF
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
100 - 100€ 0,906€ 90,58
200 - 400€ 0,888€ 88,82
500+€ 0,842€ 84,24

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

6.3V

Height

3.37mm

Страна на произход

Philippines

Детайли за продукта

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more