Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

Номер на артикул на RS: 541-0531Марка: Vishay№ по каталога на производителя: IRFD210PBF
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFD210 0.6A 200V
Запитване за ценаВсеки (ex VAT)

€ 0,80

€ 0,80 Всеки (ex VAT)

Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

€ 0,80

€ 0,80 Всеки (ex VAT)

Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

количествоЕдинична цена
1 - 9€ 0,80
10 - 49€ 0,73
50 - 99€ 0,64
100 - 249€ 0,61
250+€ 0,55

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFD210 0.6A 200V
Запитване за ценаВсеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
N-channel MOSFET,IRFD210 0.6A 200V
Запитване за ценаВсеки (ex VAT)