N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF

Номер на артикул на RS: 541-1691Марка: Vishay№ по каталога на производителя: IRFD120PBF
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Преглед на всички в MOSFETs

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 1,38

Всеки (ex VAT)

N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF

€ 1,38

Всеки (ex VAT)

N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична цена
1 - 9€ 1,38
10 - 49€ 1,25
50 - 99€ 1,17
100 - 249€ 1,04
250+€ 0,94

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Width

6.29mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

3.37mm

Страна на произход

Philippines

Детайли за продукта

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more