Vishay N-Channel MOSFET, 1.8 A, 800 V, 3-Pin TO-220AB IRFBE20PBF
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0,50
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Стандарт
1
€ 0,50
€ 0,50 Всеки (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
1
Информацията за складовите наличности временно не е налична.
Ideate. Create. Collaborate
JOIN FOR FREE
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Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products